Emulating Nociceptive Receptor and LIF Neuron Behavior via ZrO_x‐based Threshold Switching Memristor

Abstract For the progress of artificial neural networks, imitation multiple biological functions is indispensable for processing more tasks in a complex working environment. Memristors, which possess these advantages such as uniformity, high switching speed, and smaller device scale, are better candidates compared to conventional complementary metal–oxide–semiconductor (CMOS) technology networks. In this work, an Ag/ZrO x /Pt threshold memristor (TSM) designed overcome drawback large variation non‐volatile filament type memristor. The cycle‐to‐cycle device‐to‐device variations 5.6% 4.9%. This has mimicked “nociceptive threshold,” “relaxation,” “no adaptation,” “sensitization” features nociceptor can prevent intelligence system from dangers external Additionally, with change strength stimulus, neuron also built by emulating “all‐or‐nothing,” “threshold‐driven‐spiking,” “strength‐modulated” characteristics. proposed threshold‐switching allows simultaneous emulation leaky integrate‐and‐fire first time, represents advance bioinspired adopted future networks humanoid robots.